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GT40RR21(STA1,E +BOM
IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)
TO-3P(N)-
Manufacturer:
-
Mfr.Part #:
GT40RR21(STA1,E
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Datasheet:
-
Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
1.35 kV
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EDA/CAD Models:
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Availability: 7072 PCS
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GT40RR21(STA1,E General Description
IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)
Specifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.35 kV | Collector-Emitter Saturation Voltage | 1.6 V |
Maximum Gate Emitter Voltage | - 25 V, 25 V | Continuous Collector Current at 25 C | 40 A |
Pd - Power Dissipation | 230 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | GT40RR21 |
Continuous Collector Current Ic Max | 200 A | Gate-Emitter Leakage Current | 100 nA |
Product Type | IGBT Transistors | Factory Pack Quantity | 25 |
Subcategory | IGBTs |
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In Stock: 7,072
Minimum Order: 1
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