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GT40RR21(STA1ES) +BOM
High-voltage, high-current N-channel IGBT for advanced power electronic applications
TO-3PN-3-
Manufacturer:
-
Mfr.Part #:
GT40RR21(STA1ES)
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Datasheet:
-
Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
1.35 kV
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EDA/CAD Models:
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Availability: 7072 PCS
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Avaq Semiconductor offers the highly versatile and reliable GT40RR21(STA1ES) driver, produced by Toshiba. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the GT40RR21(STA1ES).
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Specifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.35 kV | Collector-Emitter Saturation Voltage | 1.6 V |
Maximum Gate Emitter Voltage | - 25 V, + 25 V | Continuous Collector Current at 25 C | 40 A |
Pd - Power Dissipation | 230 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | GT40RR21 |
Continuous Collector Current Ic Max | 200 A | Gate-Emitter Leakage Current | 100 nA |
Product Type | IGBT Transistors | Subcategory | IGBTs |
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In Stock: 7,072
Minimum Order: 1
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