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GTVA261701FA-V1-R0 +BOM
Trans RF MOSFET N-CH 150V 7.5A 3-Pin Case H-37265J-2 T/R
H-37265J-2-
Manufacturer:
Wolfspeed
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Mfr.Part #:
GTVA261701FA-V1-R0
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Datasheet:
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Transistor Type:
HEMT
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Technology:
GaN-on-SiC
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Operating Frequency:
2.62 GHz to 2.69 GHz
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Gain:
17 dB
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Availability: 7072 PCS
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GTVA261701FA-V1-R0 General Description
The GTVA261701FA-V1-R0 fixed attenuator by GT Microwave Inc. is a premium-quality product designed to deliver consistent performance in RF and microwave applications. With a wide frequency range of DC to 18 GHz, this attenuator offers versatility and reliability in signal reduction. The fixed attenuation value of 1 dB ensures a steady level of signal reduction across the operating frequency range, making it a dependable choice for professionals in the industry. The V1-R0 version and revision indicate that this is the original design with the first iteration of this specific model, highlighting the manufacturer's commitment to quality and innovation. Equipped with standard SMA connectors, the attenuator is easy to integrate into existing systems and its compact, lightweight design allows for convenient installation. Additionally, with a power handling capability of up to 2 watts, this attenuator is suitable for a wide range of applications, from laboratory settings to field use
Specifications
Product Category | RF JFET Transistors | Transistor Type | HEMT |
Technology | GaN-on-SiC | Operating Frequency | 2.62 GHz to 2.69 GHz |
Gain | 17 dB | Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 150 V | Id - Continuous Drain Current | 7.5 A |
Output Power | 170 W | Maximum Operating Temperature | + 225 C |
Mounting Style | SMD/SMT | Configuration | Single |
Product Type | RF JFET Transistors | Factory Pack Quantity | 50 |
Subcategory | Transistors | Vgs th - Gate-Source Threshold Voltage | - 3.8 V |
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In Stock: 7,072
Minimum Order: 1
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