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See Technical Specifications

HN1A01F-GR(TE85L,F +BOM

Trans GP BJT PNP 50V 0.15A 6-Pin SM T/R

Manufacturer:

Toshiba
Mfr.Part #:

HN1A01F-GR(TE85L,F
Datasheet:

HN1A01F-GR(TE85L,F Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

PNP
Configuration:

Dual
Collector- Emitter Voltage VCEO Max:

50 V

Avaq Semiconductor offers the highly versatile and reliable HN1A01F-GR(TE85L,F driver, produced by Toshiba. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the HN1A01F-GR(TE85L,F.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	PNP	Configuration	Dual
Collector- Emitter Voltage VCEO Max	50 V	Collector- Base Voltage VCBO	50 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	100 mV
Maximum DC Collector Current	150 mA	Pd - Power Dissipation	300 mW
Gain Bandwidth Product fT	80 MHz	Minimum Operating Temperature	-
Maximum Operating Temperature	+ 125 C	Series	HN1A01
DC Collector/Base Gain hfe Min	120	DC Current Gain hFE Max	400
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Unit Weight	0.000529 oz