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HN1C01FE-Y,LXHF +BOM

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6

  • Manufacturer:

    Toshiba

  • Mfr.Part #:

    HN1C01FE-Y,LXHF

  • Datasheet:

    HN1C01FE-Y,LXHF Datasheet (PDF) pdf-icon

  • Mounting Style:

    SMD/SMT

  • Transistor Polarity:

    NPN

  • Configuration:

    Single

  • Collector- Emitter Voltage VCEO Max:

    50 V

HN1C01FE-Y,LXHF General Description

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6

Toshiba Inventory
Toshiba Original Stock

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 100 mV
Pd - Power Dissipation 100 mW Gain Bandwidth Product fT 80 MHz
Maximum Operating Temperature + 150 C Qualification AEC-Q200
Continuous Collector Current 150 mA DC Collector/Base Gain hfe Min 120 at 2 mA, 6 V
DC Current Gain hFE Max 400 at 2 mA, 6 V Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 4000 Subcategory Transistors
Technology Si Part # Aliases HN1C01FE-Y,LXHF(B

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