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HN1C01FE-GR,LF +BOM

Bipolar Transistors - BJT Transistor for Small Signal Amp

  • Manufacturer:

    Toshiba

  • Mfr.Part #:

    HN1C01FE-GR,LF

  • Datasheet:

    HN1C01FE-GR,LF Datasheet (PDF) pdf-icon

  • Mounting Style:

    SMD/SMT

  • Transistor Polarity:

    NPN

  • Configuration:

    Dual

  • Collector- Emitter Voltage VCEO Max:

    50 V

HN1C01FE-GR,LF General Description

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6

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Toshiba Original Stock

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Dual
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 100 mV
Maximum DC Collector Current 150 mA Pd - Power Dissipation 100 mW
Gain Bandwidth Product fT 80 MHz Minimum Operating Temperature -
Maximum Operating Temperature + 150 C Qualification AEC-Q101
Series HN1C01 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 4000 Subcategory Transistors
Technology Si Unit Weight 0.000106 oz

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