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HN1B04FU-GR,LF +BOM
Bipolar transistors for low frequency small-signal amplification
SOT-363-6-
Manufacturer:
-
Mfr.Part #:
HN1B04FU-GR,LF
-
Datasheet:
-
Mounting Style:
SMD/SMT
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Transistor Polarity:
NPN, PNP
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Configuration:
Dual
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Collector- Emitter Voltage VCEO Max:
50 V
Availability: 7072 PCS
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HN1B04FU-GR,LF General Description
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 150mA 150MHz 200mW Surface Mount US6
Application
Driver Stage Amplifier Applications
Switching application
Specifications
Product Category | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
Transistor Polarity | NPN, PNP | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 50 V | Collector- Base Voltage VCBO | 60 V, 50 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 100 mV |
Maximum DC Collector Current | 150 mA | Pd - Power Dissipation | 200 mW |
Gain Bandwidth Product fT | 150 MHz, 120 MHz | Minimum Operating Temperature | - |
Maximum Operating Temperature | + 125 C | Qualification | AEC-Q101 |
Series | HN1B04 | DC Collector/Base Gain hfe Min | 120 |
DC Current Gain hFE Max | 400 | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Technology | Si | Unit Weight | 0.000265 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
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