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IAUC100N04S6N015ATMA1 +BOM

Automotive-grade power semiconductor for demanding systems

IAUC100N04S6N015ATMA1 General Description

N-Channel 40 V 100A (Tc) 100W (Tc) Surface Mount PG-TDSON-8

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Key Features

  • OptiMOS
  • TM
  • N-channel - Enhancement mode - Normal Level
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
Infineon Technologies Corporation Original Stock

Specifications

RHoS yes PBFree yes
HalogenFree yes Product Category MOSFET
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 1.42 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.6 V Qg - Gate Charge 42 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 100 W Channel Mode Enhancement
Fall Time 8 ns Product Type MOSFET
Rise Time 4 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 15 ns Typical Turn-On Delay Time 7 ns
Part # Aliases IAUC100N04S6N015 SP001700154 Unit Weight 0.003966 oz

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IAUC100N04S6N015ATMA1 Datasheet PDF

Preliminary Specification IAUC100N04S6N015ATMA1 PDF Download

IAUC100N04S6N015ATMA1 PDF Preview

In Stock: 6,690

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.914 $0.91
200+ $0.354 $70.80
500+ $0.342 $171.00
1000+ $0.336 $336.00

The prices below are for reference only.

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