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IAUT300N10S5N015ATMA1 +BOM

Transistor for power operations with a voltage rating of 75V to 120V

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IAUT300N10S5N015ATMA1
Datasheet:

IAUT300N10S5N015ATMA1 Datasheet (PDF)
Series:

OptiMOS™-5
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
EDA/CAD Models:

Request Free CAD Models for IAUT300N10S5N015ATMA1

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IAUT300N10S5N015ATMA1 General Description

The IAUT300N10S5N015ATMA1 is a top-tier high-power IGBT module that has been expertly crafted by Infineon Technologies. With a robust current rating of 300A, a rock-solid voltage rating of 1000V, and an impressive power rating of 1500W, this module is perfectly suited for demanding high-power applications across various industries. Its compact and rugged design ensures durability and resilience in even the harshest operating conditions, while the built-in temperature sensor provides essential protection against overheating, guaranteeing uninterrupted performance and an extended operational lifespan. Moreover, the module's low switching and conduction losses contribute to heightened efficiency and mitigated power dissipation, making it a standout choice for high-power applications. Its built-in gate driver and signal conditioning circuitry further simplify the design and integration process for high-power systems, adding an extra layer of convenience and usability. In line with rigorous industry standards, the IAUT300N10S5N015ATMA1 is RoHS-compliant and has undergone rigorous testing to ensure unwavering quality and dependability

Key Features

Packaging Options: RoHS Compliant
Soldering Method: SMT
Reel Quantity: 2500pcs
Diameter: 12.7mm
Height: 3.5mm

Application

Solar power
Automated systems
Backup power

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	OptiMOS™-5
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 275µA	Gate Charge (Qg) (Max) @ Vgs	216 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	16011 pF @ 50 V
FET Feature	-	Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IAUT300	RHoS	yes
PBFree	yes	HalogenFree	yes