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IHW20N120R2 +BOM

IGBT Transistors REVERSE CONDUCT IGBT 1200V 20A

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IHW20N120R2 General Description

IGBT NPT, Trench Field Stop 1200 V 40 A 330 W Through Hole PG-TO247-3-1

Key Features

  • Powerful monolithic Body Diode with very low forward voltage
  • Body diode clamps negative voltages
  • Trench and Fieldstop technology for 1200 V applications offers :
  • - very tight parameter distribution
  • - high ruggedness, temperature stable behavior
  • NPT technology offers easy parallel switching capability due to
  • positive temperature coefficient in VCE(sat)
  • Low EMI
  • Qualified according to JEDEC1 for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models :

Specifications

Series TrenchStop® IGBT Type NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 20A
Power - Max 330 W Switching Energy 1.2mJ (off)
Input Type Standard Gate Charge 143 nC
Td (on/off) @ 25°C -/359ns Test Condition 600V, 20A, 15Ohm, 15V
Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole
Base Product Number IHW20

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