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See Technical Specifications

IHW50N65R5 +BOM

TO-247 Tube Trans IGBT Chip N-CH 650V 80A 282W Automotive

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IHW50N65R5
Datasheet:

IHW50N65R5 Datasheet (PDF)
Series:

TrenchStop®
Voltage - Collector Emitter Breakdown (Max):

650 V
Current - Collector (Ic) (Max):

80 A
Current - Collector Pulsed (Icm):

150 A
EDA/CAD Models:

Request Free CAD Models for IHW50N65R5

IHW50N65R5 General Description

Experience the next level of performance with the IHW50N65R5 IGBT module, designed for demanding power electronics applications. Featuring a 650V voltage rating and 50A current rating, this module is a powerhouse suitable for a wide range of high power projects. Its cutting-edge IGBT technology delivers low saturation voltage and minimal switching losses, ensuring maximum efficiency and minimal heat dissipation. Safety is paramount with built-in temperature and overcurrent protection, enhancing the module's durability and reliability. Additionally, the integrated gate drive circuitry streamlines the design process, making it easy for engineers to harness the full potential of the IHW50N65R5 in their applications

Infineon Technologies Corporation Inventory

Infineon Technologies Corporation Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	TrenchStop®
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	80 A	Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 50A	Power - Max	282 W
Switching Energy	740µJ (on), 180µJ (off)	Input Type	Standard
Gate Charge	230 nC	Td (on/off) @ 25°C	26ns/220ns
Test Condition	400V, 25A, 8Ohm, 15V	Reverse Recovery Time (trr)	95 ns
Operating Temperature	-40°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IHW50N65	Pin Count	3
Released Date	Feb 16, 2021	Last Modified Date	Mar 7, 2023 4:10 PM UTC