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See Technical Specifications

IPA60R160C6 +BOM

N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Manufacturer:

INFINEON
Mfr.Part #:

IPA60R160C6
Datasheet:

IPA60R160C6 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

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IPA60R160C6 General Description

N-Channel 600 V 23.8A (Tc) 34W (Tc) Through Hole PG-TO220-FP

Key Features

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Easy to use/drive

JEDEC1) qualified, Pb-free plating, Halogen free

Application

PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.

Specifications

Source Content uid	IPA60R160C6	Pbfree Code	Yes
Part Life Cycle Code	Not Recommended	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	497 mJ	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	600 V
Drain Current-Max (ID)	23.8 A	Drain-source On Resistance-Max	0.16 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	34 W	Pulsed Drain Current-Max (IDM)	70 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON