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IPB019N08N3G +BOM

Robust and reliable semiconductor component for industrial automation

IPB019N08N3G General Description

N-Channel 80 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

Key Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for motor drive applications.
  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • Superior thermal resistance
  • N-channel - Logic level
  • 100% avalanche tested
  • Pb-free plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Halogen-free according to IEC61249-2-21

Specifications

Source Content uid IPB019N08N3G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 7
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 1430 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 180 A Drain-source On Resistance-Max 0.0019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSSO-G6
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W Pulsed Drain Current-Max (IDM) 720 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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