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See Technical Specifications

IPB06N03LA +BOM

MOSFET N-CH 25V 50A D2PAK

Manufacturer:

INFINEON
Mfr.Part #:

IPB06N03LA
Datasheet:

IPB06N03LA Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

4
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for IPB06N03LA

Email: [email protected]

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Tel: +852 95804164

IPB06N03LA General Description

Whether you need to upgrade existing equipment or design a new electronic system, the IPB06N03LA offers a reliable solution for high-power requirements. Its N-Channel design and TO-263 package make it easy to integrate into your circuit design, while its high current rating and low on-state resistance ensure efficient and reliable performance in demanding environments

Key Features

LOGIC LEVEL COMPATIBLE

Application

SWITCHING

Specifications

Source Content uid	IPB06N03LA	Part Life Cycle Code	Obsolete
Pin Count	4	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Additional Feature	LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)	225 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	25 V
Drain Current-Max (ID)	50 A	Drain-source On Resistance-Max	0.0095 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e0
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	220
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	83 W
Pulsed Drain Current-Max (IDM)	350 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN LEAD
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON