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See Technical Specifications

IPB50R140CP +BOM

MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP

Manufacturer:

INFINEON
Mfr.Part #:

IPB50R140CP
Datasheet:

IPB50R140CP Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for IPB50R140CP

Email: [email protected]

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Tel: +852 95804164

IPB50R140CP General Description

Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Key Features

Lowest figure-of-merit Ron x Qg
Ultra low gate charge
Extreme dv/dt rated
High peak current capability
Pb-free lead plating; RoHS compliant; Halogen free mold compound
Qualified for industrial grade applications according to JEDEC1)

Specifications

Source Content uid	IPB50R140CP	Pbfree Code	Yes
Part Life Cycle Code	Not Recommended	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	616 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	500 V
Drain Current-Max (ID)	23 A	Drain-source On Resistance-Max	0.14 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	192 W
Pulsed Drain Current-Max (IDM)	56 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON