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IPB80N08S2-07 +BOM

Engineered for high-speed switching and maximum efficiency, this IPBNS Trans MOSFET is perfect for advanced driver-assistance systems (ADAS

Manufacturer:

Infineon
Mfr.Part #:

IPB80N08S2-07
Datasheet:

IPB80N08S2-07 Datasheet (PDF)
IDpuls Max:

320.0 A
RthJC Max:

0.5 K/W
Ptot Max:

300.0 W
Qualification:

Automotive
EDA/CAD Models:

Request Free CAD Models for IPB80N08S2-07

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IPB80N08S2-07 General Description

With its TO-263AB package and green plastic material, the IPB80N08S2-07 power field-effect transistor offers a reliable and environmentally friendly solution for high-power circuit designs. The low on-state resistance of 0.0071ohm minimizes power losses and ensures efficient operation. Its N-Channel design and silicon construction make it well-suited for use in a wide range of industrial and automotive applications, where high currents and voltages are present. This transistor's 80A current rating and 75V voltage rating make it a robust and dependable choice for demanding electronic systems

Key Features

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
100% Avalanche tested

Specifications

IDpuls max	320.0 A	RthJC max	0.5 K/W
Ptot max	300.0 W	Qualification	Automotive
VDS max	75.0 V	VGS(th) min	2.1 V
RDS (on) max	7.1 mΩ	VGS(th) max	4.0 V
QG max	144.0 nC	Polarity	N
ID max	80.0 A	Technology	OptiMOS™
Operating Temperature max	175.0 °C	Operating Temperature min	-55.0 °C