This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IPBE65R050CFD7A +BOM

Field-Effect Transistor for Power Applications

Manufacturer:

INFINEON
Mfr.Part #:

IPBE65R050CFD7A
Datasheet:

IPBE65R050CFD7A Datasheet (PDF)
Part Life Cycle Code:

Active
ECCN Code:

EAR99
Additional Feature:

HIGH RELIABILITY
Avalanche Energy Rating (Eas):

248 mJ
EDA/CAD Models:

Request Free CAD Models for IPBE65R050CFD7A

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IPBE65R050CFD7A General Description

The IPBE65R050CFD7A power MOSFET transistor from Infineon Technologies is a reliable and high-performance component designed for use in a variety of high-power applications. With a continuous drain current rating of 65A and a breakdown voltage of 50V, this transistor is capable of handling demanding power requirements with ease. Its low on-state resistance of 0.045 ohms ensures minimal power losses, resulting in improved efficiency and performance in power conversion systems

Specifications

Part Life Cycle Code	Active	Reach Compliance Code
ECCN Code	EAR99	Additional Feature	HIGH RELIABILITY
Avalanche Energy Rating (Eas)	248 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	650 V
Drain Current-Max (ID)	45 A	Drain-source On Resistance-Max	0.05 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263
JESD-30 Code	R-PSSO-G7	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	7	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-40 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	227 W
Pulsed Drain Current-Max (IDM)	211 A	Reference Standard	AEC-Q101
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON