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See Technical Specifications

IPD50N06S4-09 +BOM

TO-252-3 MOSFETs ROHS IPD50N06S4-09

Manufacturer:

INFINEON
Mfr.Part #:

IPD50N06S4-09
Datasheet:

IPD50N06S4-09 Datasheet (PDF)
IDpuls Max:

200.0 A
RthJC Max:

2.1 K/W
Ptot Max:

71.0 W
Qualification:

Automotive
EDA/CAD Models:

Request Free CAD Models for IPD50N06S4-09

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IPD50N06S4-09 General Description

Infineon Technologies' IPD50N06S4-09 is a power MOSFET designed for high-power applications in automotive, industrial, and power supply industries. With a drain-source voltage of 60 volts and a continuous drain current of 50 amperes, this MOSFET is capable of handling demanding power requirements. Its low on-resistance of 0.009 ohms helps to minimize power losses and improve efficiency in circuit designs. The TO-252 package, known for its surface-mount design and excellent thermal performance, makes the IPD50N06S4-09 easy to mount on circuit boards using standard soldering techniques

Specifications

IDpuls max	200.0 A	RthJC max	2.1 K/W
Ptot max	71.0 W	Qualification	Automotive
VDS max	60.0 V	VGS(th) min	2.0 V
RDS (on) max	9.0 mΩ	VGS(th) max	4.0 V
QG max	36.0 nC	Polarity	N
ID max	50.0 A	Technology	OptiMOS™-T2
Operating Temperature max	175.0 °C	Operating Temperature min	-55.0 °C