Avaq Semiconductor offers the highly versatile and reliable IPD80R1K0CE driver, produced by INFINEON. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IPD80R1K0CE.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Specifications
| Source Content uid |
IPD80R1K0CE |
Part Life Cycle Code |
Active |
| Reach Compliance Code |
not_compliant |
ECCN Code |
EAR99 |
| Avalanche Energy Rating (Eas) |
230 mJ |
Configuration |
SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
800 V |
Drain Current-Max (ID) |
5.7 A |
| Drain-source On Resistance-Max |
0.95 Ω |
FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code |
TO-252 |
JESD-30 Code |
R-PSSO-G2 |
| JESD-609 Code |
e3 |
Moisture Sensitivity Level |
1 |
| Number of Elements |
1 |
Number of Terminals |
2 |
| Operating Mode |
ENHANCEMENT MODE |
Operating Temperature-Max |
150 °C |
| Operating Temperature-Min |
-55 °C |
Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
83 W |
Pulsed Drain Current-Max (IDM) |
18 A |
| Surface Mount |
YES |
Terminal Finish |
TIN |
| Terminal Form |
GULL WING |
Terminal Position |
SINGLE |
| Transistor Application |
SWITCHING |
Transistor Element Material |
SILICON |
| Product Category |
MOSFET |
Technology |
Si |
| Mounting Style |
SMD/SMT |
Transistor Polarity |
N-Channel |
| Number of Channels |
1 Channel |
Vds - Drain-Source Breakdown Voltage |
800 V |
| Id - Continuous Drain Current |
5.7 A |
Rds On - Drain-Source Resistance |
800 mOhms |
| Vgs - Gate-Source Voltage |
- 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage |
2.1 V |
| Qg - Gate Charge |
31 nC |
Minimum Operating Temperature |
- 55 C |
| Maximum Operating Temperature |
+ 150 C |
Pd - Power Dissipation |
83 W |
| Channel Mode |
Enhancement |
Tradename |
CoolMOS |
| Series |
CoolMOS CE |
Fall Time |
8 ns |
| Height |
2.3 mm |
Length |
6.5 mm |
| Product Type |
MOSFET |
Rise Time |
15 ns |
| Factory Pack Quantity |
2500 |
Subcategory |
MOSFETs |
| Transistor Type |
1 N-Channel |
Typical Turn-Off Delay Time |
72 ns |
| Typical Turn-On Delay Time |
25 ns |
Width |
6.22 mm |
| Part # Aliases |
SP001100606 IPD80R1K0CEBTMA1 |
Unit Weight |
0.011640 oz |
| IDpuls max |
18.0 A |
RthJC max |
1.5 K/W |
| RthJA max |
62.0 K/W |
Ptot max |
83.0 W |
| VDS max |
800.0 V |
Polarity |
N |
| Mounting |
SMT |
ID max |
5.7 A |
| RDS (on) max |
950.0 mΩ |
Special Features |
price/performance |
| VGS(th) max |
3.9 V |
VGS(th) min |
2.1 V |
| Operating Temperature max |
150.0 °C |
Operating Temperature min |
-55.0 °C |
Service Policies and Others
After-Sales & Settlement Related
Payment
Shipping & Packing
Shipping Method
Packing
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
Warranty
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
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