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See Technical Specifications

IPW60R037P7 +BOM

Elegant solution for demanding motor control and switching needs

Manufacturer:

INFINEON
Mfr.Part #:

IPW60R037P7
Datasheet:

IPW60R037P7 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

295 mJ
EDA/CAD Models:

Request Free CAD Models for IPW60R037P7

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IPW60R037P7 General Description

Say goodbye to trade-offs between efficiency and simplicity with the IPW60R037P7. As the latest addition to the CoolMOS™ family, this superjunction MOSFET is designed to meet the demands of modern power electronics. Its low gate charge and exceptional R onxA make it ideal for a wide range of applications, from consumer electronics to renewable energy systems

Key Features

Worldwide best R ds,on in TO247

Ultra low gate charge

Extreme dv/dt rated

High peak current capability

Qualified according to JEDEC1) for target applications

Pb-free lead plating; RoHS compliant

Application

SWITCHING

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	295 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	76 A
Drain-source On Resistance-Max	0.037 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	255 W
Pulsed Drain Current-Max (IDM)	280 A	Surface Mount	NO
Terminal Finish	TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON