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IPW60R045CP +BOM

650V 60A TO247-3 N-Channel MOSFET CoolMOS CP

Manufacturer:

Infineon
Mfr.Part #:

IPW60R045CP
Datasheet:

IPW60R045CP Datasheet (PDF)
RthJC Max:

0.29 K/W
VGS(th) Max:

3.5 V
VGS(th) Min:

2.5 V
IDpuls Max:

230.0 A
EDA/CAD Models:

Request Free CAD Models for IPW60R045CP

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IPW60R045CP General Description

Infineon Technologies' CoolMOS™ product line proudly presents the IPW60R045CP, a MOSFET that embodies the very best in power semiconductor technology. Boasting a drain-source voltage rating of 650V and a continuous drain current of 24A, this MOSFET stands ready for high-power applications with confidence. Its remarkably low on-state resistance of 45mΩ significantly reduces power losses, elevating the efficiency of power conversion systems. The compact TO-247 package not only simplifies installation and thermal management but also fortifies the MOSFET's resilience in demanding environments. With a high avalanche energy rating, the IPW60R045CP stands guard against voltage spikes and transient events, ensuring unwavering performance and longevity. Whether in industrial or automotive settings, this MOSFET shines as a beacon of reliability and efficiency, meeting the rigorous demands of modern high-voltage applications with ease

Key Features

Superior thermal conductivity
Robust electrostatic discharge protection
Fast recovery time
Low power loss

Application

High-frequency operation
Robust thermal performance
Integrated protection features

Specifications

RthJC max	0.29 K/W	VGS(th) max	3.5 V
VGS(th) min	2.5 V	IDpuls max	230.0 A
RthJA max	62.0 K/W	Operating Temperature min	-55.0 °C
Ptot max	431.0 W	VDS max	600.0 V
Polarity	N	ID max	60.0 A
RDS (on) max	45.0 mΩ	Mounting	THT