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See Technical Specifications

IPW60R099CP +BOM

N-Channel MOSFET CoolMOS CP TO-247-3 600V 31A

Manufacturer:

Infineon
Mfr.Part #:

IPW60R099CP
Datasheet:

IPW60R099CP Datasheet (PDF)
RthJC Max:

0.5 K/W
VGS(th) Max:

3.5 V
VGS(th) Min:

2.5 V
IDpuls Max:

93.0 A
EDA/CAD Models:

Request Free CAD Models for IPW60R099CP

Email: [email protected]

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Tel: +852 95804164

IPW60R099CP General Description

The IPW60R099CP is a state-of-the-art N-Channel Power Field-Effect Transistor equipped with advanced Silicon technology and Metal-oxide Semiconductor design. Its impressive 31A current rating and 600V voltage rating make it a standout choice for high-power applications. The low on-resistance of 0.099ohm ensures minimal power loss and excellent efficiency. The TO-247 package and green, plastic housing provide durability and environmental friendliness

Key Features

Ultra-low power consumption
Fast switching times guaranteed
High reliability assured
Ruggedized for harsh environments
Durable in high-temperature applications

Application

Power electronics industry
Grid-tied solar systems
Battery pack design

Specifications

RthJC max	0.5 K/W	VGS(th) max	3.5 V
VGS(th) min	2.5 V	IDpuls max	93.0 A
RthJA max	62.0 K/W	Operating Temperature min	-55.0 °C
Ptot max	255.0 W	VDS max	600.0 V
Polarity	N	ID max	31.0 A
RDS (on) max	99.0 mΩ	Mounting	THT