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See Technical Specifications

IPW60R180P7 +BOM

High-power semiconductor device for switching applications

Manufacturer:

INFINEON
Mfr.Part #:

IPW60R180P7
Datasheet:

IPW60R180P7 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

56 mJ
EDA/CAD Models:

Request Free CAD Models for IPW60R180P7

Email: [email protected]

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Tel: +852 95804164

IPW60R180P7 General Description

Target applications for the 600V CoolMOS™ P7 include various power electronics systems where efficiency is paramount. Its exceptional performance makes it ideal for use in inverters, motor control, and power factor correction applications, among others

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	56 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	600 V
Drain-source On Resistance-Max	0.18 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Min	-55 °C	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	53 A	Surface Mount	NO
Terminal Finish	TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON