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See Technical Specifications

IPW65R041CFD +BOM

Trans MOSFET N-CH 700V 68.5A 3-Pin(3+Tab) TO-247 Tube

Manufacturer:

INFINEON
Mfr.Part #:

IPW65R041CFD
Datasheet:

IPW65R041CFD Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for IPW65R041CFD

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Key Features

Ultra-fast body diode
Very high commutation ruggedness
Extremely low losses due to very low FOM Rdson Qg and Eoss
Easy to use/drive
Pb-free plating, Halogen free mold compound
Qualified for industrial grade applications according to JEDEC
(J-STD20 and JESD22)

Specifications

Source Content uid	IPW65R041CFD	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	2185 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	650 V	Drain Current-Max (ID)	68.5 A
Drain-source On Resistance-Max	0.041 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	500 W
Pulsed Drain Current-Max (IDM)	255 A	Surface Mount	NO
Terminal Finish	TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V	Id - Continuous Drain Current	68.5 A
Rds On - Drain-Source Resistance	37 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3.5 V	Qg - Gate Charge	300 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 W	Channel Mode	Enhancement
Tradename	CoolMOS	Series	CoolMOS CFD2
Fall Time	8 ns	Height	21.1 mm
Length	16.13 mm	Product Type	MOSFET
Rise Time	28 ns	Factory Pack Quantity	240
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	127 ns	Typical Turn-On Delay Time	34 ns
Width	5.21 mm	Part # Aliases	IPW65R041CFDFKSA1 SP000756288 IPW65R041CFDFKSA1
Unit Weight	0.211644 oz