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IPW65R110CFD +BOM

N-Channel MOSFET Transistor

IPW65R110CFD General Description

Whether you are building industrial machinery or automotive electronics, the IPW65R110CFD transistor is a versatile component that can enhance the efficiency and reliability of your design. Its single-element design simplifies installation and reduces the overall complexity of the circuit layout

Key Features

  • Ultra-fast body diode
  • Very high commutation ruggedness
  • Extremely low losses due to very low FOM Rdson^Qg and Eoss
  • Easy to use/drive
  • ​​​​​​​ Qualified for industrial grade applications according to JEDEC
  • (J-STD20 and JESD22)
  • Pb-free plating, Halogen free mold compound

Specifications

Source Content uid IPW65R110CFD Pbfree Code Yes
Part Life Cycle Code Active Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 845 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V Drain Current-Max (ID) 31.2 A
Drain-source On Resistance-Max 0.11 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 277.8 W
Pulsed Drain Current-Max (IDM) 99.6 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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In Stock: 4,151

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $14.929 $14.93
10+ $14.385 $143.85
30+ $13.440 $403.20
100+ $12.617 $1,261.70

The prices below are for reference only.