This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IRF350 +BOM

400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A IRF350 with Hermetic PackagingBenefits

Manufacturer:

NTE Electronics, Inc
Mfr.Part #:

IRF350
Datasheet:

IRF350 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

400 V
Current - Continuous Drain (Id) @ 25°C:

14A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRF350

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRF350 General Description

Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Key Features

Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling

Application

SWITCHING

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	400 V	Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	400mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	2600 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole