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See Technical Specifications

IRF5210PBF +BOM

P-Channel 100 V 40A (Tc) 200W (Tc) Through Hole TO-220AB

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IRF5210PBF
Datasheet:

IRF5210PBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
EDA/CAD Models:

Request Free CAD Models for IRF5210PBF

Email: [email protected]

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Tel: +852 95804164

IRF5210PBF General Description

The IRF5210PBF comes in a TO-220 package, providing excellent thermal performance and easy mounting on a heat sink. This package also allows for easy integration into existing circuit designs and provides protection against overcurrent and overheating. Its robust design and advanced features make it a reliable and efficient choice for power management in various electronic applications

Key Features

Metal-Turned Construction
Strong Durability
Lightweight Design

Application

Motor control applications
Industrial power supplies
Inverter system control

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	HEXFET®
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	60mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IRF5210	RHoS	yes
PBFree	yes	HalogenFree	yes