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IRF530NS +BOM

This product is an N-Channel Silicon Metal-oxide Semiconductor FET with a power rating of 17A and a voltage rating of 100V

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IRF530NS General Description

N-Channel 100 V 17A (Tc) 3.8W (Ta), 70W (Tc) Surface Mount D2PAK

Key Features

AVALANCHE RATED

Application

SWITCHING

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 93 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 17 A Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSSO-G2
JESD-609 Code e0 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 225 Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN LEAD
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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