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IRF630N +BOM

N-channel MOSFET with high current capaci

email Email: [email protected]
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tel Tel: +852 95804164

IRF630N General Description

The IRF630N is a reliable and efficient power MOSFET that offers designers a wide portfolio of options to support various applications. Its industry standard footprints and variety of packages make it easy to integrate into designs, whether you're working on inverters, lighting solutions, or load switches. With its proven silicon processes, the IRF630N is a dependable choice for any project requiring power MOSFET technology

Specifications

Tj max 175.0 °C Mounting THT
Polarity N Ptot max 82.0 W
RthJC max 1.83 K/W VDS max 200.0 V
VGS max 20.0 V RDS (on) max 300.0 mΩ
VGS(th) max 4.0 V VGS(th) min 2.0 V
ID max 9.3 A Operating Temperature max 175.0 °C
Operating Temperature min -55.0 °C

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In Stock: 7,766

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.222 $0.22
10+ $0.196 $1.96
50+ $0.168 $8.40
100+ $0.155 $15.50
500+ $0.148 $74.00
1000+ $0.144 $144.00

The prices below are for reference only.

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