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IRF830 +BOM

Robust N-Channel Transistor suitable for power electronic designs

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

IRF830 General Description

N-Channel 500 V 4.5A (Tc) 100W (Tc) Through Hole TO-220

Key Features

AVALANCHE RATED

Application

SWITCHING

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 4.5 A Rds On - Drain-Source Resistance 1.5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 75 W
Channel Mode Enhancement Series IRF830
Configuration Single Fall Time 16 ns
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 15 ns
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 33 ns Typical Turn-On Delay Time 10 ns
Width 4.7 mm Unit Weight 0.068784 oz

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In Stock: 7,547

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.266 $0.27
10+ $0.214 $2.14
50+ $0.191 $9.55
100+ $0.164 $16.40
500+ $0.152 $76.00
1000+ $0.144 $144.00

The prices below are for reference only.

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