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IRFP460 +BOM

MOSFET Transistor, N-Channel, TO-247AC

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IRFP460 General Description

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

Key Features

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Isolated central mounting hole
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

    • Specifications

    Product Category MOSFET Technology Si
    Mounting Style Through Hole Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
    Id - Continuous Drain Current 20 A Rds On - Drain-Source Resistance 220 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 65 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 220 W
    Channel Mode Enhancement Series IRFP460
    Configuration Single Fall Time 21 ns
    Forward Transconductance - Min 13 S Height 20.15 mm
    Length 15.75 mm Product Type MOSFET
    Rise Time 21 ns Factory Pack Quantity 30
    Subcategory MOSFETs Transistor Type 1 N-Channel
    Type MOSFET Typical Turn-On Delay Time 29 ns
    Width 5.15 mm Unit Weight 0.211644 oz

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