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IRFB17N50L +BOM

MOSFET RECOMMENDED ALT 844-IRFB17N50LPBF

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

IRFB17N50L General Description

Power Field-Effect Transistor, 16A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Key Features

  • High-density and high-frequency applications supported
  • Low losses and minimal electromagnetic interference (EMI)
  • Suitable for battery management systems (BMS) and motor control units (MCUs)

Application

  • Switch Mode Power Supply (SMPS)
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • ZVS and High Frequency Circuit
  • PWM Inverters

Specifications

Part Life Cycle Code Transferred Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 390 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.32 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 64 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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