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IRFB20N50KPBF +BOM

Product details for IRFB20N50KPBF

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IRFB20N50KPBF General Description

N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-220AB

Key Features

  • Low gate charge Qg results in simple drive requirement
  • Improved gate, avalanche, and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche voltage and current
  • Low RDS(on)

    • Specifications

    Product Category MOSFET REACH Details
    Technology Si Mounting Style Through Hole
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 20 A
    Rds On - Drain-Source Resistance 250 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
    Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 110 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Pd - Power Dissipation 280 W Channel Mode Enhancement
    Series IRFB Configuration Single
    Fall Time 33 ns Forward Transconductance - Min 11 S
    Height 15.49 mm Length 10.41 mm
    Product Type MOSFET Rise Time 74 ns
    Factory Pack Quantity 1000 Subcategory MOSFETs
    Transistor Type 1 N-Channel Typical Turn-Off Delay Time 45 ns
    Typical Turn-On Delay Time 22 ns Width 4.7 mm
    Unit Weight 0.068784 oz

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    In Stock: 7,939

    Minimum Order: 1

    Qty. Unit Price Ext. Price
    1+ $3.827 $3.83
    10+ $3.309 $33.09
    30+ $3.001 $90.03
    100+ $2.691 $269.10
    500+ $2.549 $1,274.50
    1000+ $2.484 $2,484.00

    The prices below are for reference only.

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