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IRFL014 +BOM

MOSFET RECOMMENDED ALT 844-IRFL014TRPBF

email Email: [email protected]
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tel Tel: +852 95804164

IRFL014 General Description

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Key Features

  • External sense input pin
  • Voltage tracking circuitry
  • Overtemperature warning flag
  • Pulse by pulse current limit
  • Input voltage range expansion
  • Safety certification complies

Specifications

Pbfree Code No Part Life Cycle Code Obsolete
Pin Count 4 Reach Compliance Code compliant
ECCN Code EAR99 Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (ID) 2.7 A
Drain-source On Resistance-Max 0.2 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA JESD-30 Code R-PSSO-G3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN LEAD Terminal Form GULL WING
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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