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IRFM450 +BOM

Packaged in a hermetic enclosure

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

IRFM450 General Description

Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-254AA

Key Features

HIGH RELIABILITY

Specifications

Pbfree Code No Part Life Cycle Code Transferred
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 750 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 12 A Drain-source On Resistance-Max 0.515 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-254AA
JESD-30 Code S-MSFM-P3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form PIN/PEG
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 225 ns

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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