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IRG4PF50WDPBF +BOM

IGBT 900 V 51 A 200 W Through Hole TO-247AC

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IRG4PF50WDPBF General Description

IGBT 900 V 51 A 200 W Through Hole TO-247AC

Key Features

  • 50% Reduction of Eoff parameter
  • Lower switching losses allow more effective operation in replacing large die MOSFET up to 100kHz

Application

  • Power Management
  • Motor Drive & Control

Specifications

Source Content uid IRG4PF50WDPBF Part Life Cycle Code Obsolete
Reach Compliance Code compliant ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS Case Connection COLLECTOR
Collector Current-Max (IC) 51 A Collector-Emitter Voltage-Max 900 V
Configuration SINGLE WITH BUILT-IN DIODE Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 460 ns Turn-on Time-Nom (ton) 121 ns

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