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See Technical Specifications

IRLIZ44NPBF +BOM

Power Field-Effect Transistor, 30A current rating, 55V voltage rating, 0.022ohm resistance, N-Channel

Manufacturer:

INFINEON
Mfr.Part #:

IRLIZ44NPBF
Datasheet:

IRLIZ44NPBF Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

55 V
Current - Continuous Drain (Id) @ 25°C:

30A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRLIZ44NPBF

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IRLIZ44NPBF General Description

MOSFET, N, LOGIC, FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:38W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

Key Features

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Application

SWITCHING

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V	Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V	Rds On (Max) @ Id, Vgs	22mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	48 nC @ 5 V
Vgs (Max)	±16V	Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole