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IRLML6401TR +BOM

P-type Metal-Oxide-Semiconductor Field-Effect Transistor with Silicon material, 12 Volts, 4.3 Amps

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IRLML6401TR General Description

P-Channel 12 V 4.3A (Ta) Surface Mount Micro3™/SOT-23

Specifications

Part Life Cycle Code Obsolete Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 33 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.05 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 125 pF JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.3 W Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN LEAD Terminal Form GULL WING
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 460 ns
Turn-on Time-Max (ton) 43 ns

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