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IRLMS2002TRPBF +BOM

Power Metal-Oxide-Semiconductor Field-Effect Transistor in N-channel configuration, capable of handling up to 20 volts and 6

Manufacturer:

Infineon
Mfr.Part #:

IRLMS2002TRPBF
Datasheet:

IRLMS2002TRPBF Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IRLMS2002TRPBF

Email: [email protected]

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Tel: +852 95804164

IRLMS2002TRPBF General Description

Infineon Technologies delivers a high-performance solution with the IRLMS2002TRPBF dual N-channel MOSFET power transistor. Its compact SMD D2PAK package and low profile make it suitable for applications where space is limited, and its maximum drain-source voltage of 20V and continuous drain current of 4.3A allow it to handle moderate power loads. With a low on-resistance and gate threshold voltage, this transistor minimizes power losses and is easy to drive with standard logic-level signals, enhancing its efficiency in power conversion applications

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	6.5 A	Rds On - Drain-Source Resistance	30 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	1.2 V
Qg - Gate Charge	15 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	16 ns	Forward Transconductance - Min	13 S
Height	1.1 mm	Length	3 mm
Product Type	MOSFET	Rise Time	11 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	36 ns
Typical Turn-On Delay Time	8.5 ns	Width	1.5 mm
Unit Weight	0.000705 oz