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See Technical Specifications

IRLZ34N +BOM

Trans MOSFET N-CH Si 55V 30A 3-Pin(3+Tab) TO-220AB Tube

Manufacturer:

NXP
Mfr.Part #:

IRLZ34N
Datasheet:

IRLZ34N Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IRLZ34N

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRLZ34N General Description

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	55 V
Id - Continuous Drain Current	30 A	Rds On - Drain-Source Resistance	35 mOhms
Vgs - Gate-Source Voltage	- 13 V, + 13 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	68 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	48 ns	Height	9.4 mm
Length	10.3 mm	Product Type	MOSFET
Rise Time	77 ns	Factory Pack Quantity	50
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	55 ns	Typical Turn-On Delay Time	14 ns
Width	4.5 mm	Unit Weight	0.068784 oz