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BF199 +BOM

General-purpose RF amplifier transistor offering moderate power handling and frequency range capabilitie

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BF199 General Description

RF Transistor NPN 25V 50mA 1.1GHz 350mW Through Hole TO-92-3

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 25 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 4 V Maximum DC Collector Current 25 mA
Pd - Power Dissipation 500 mW Gain Bandwidth Product fT 550 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 38 DC Current Gain hFE Max 38 at 7 mA, 10 V
Height 5.2 mm Length 4.8 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1000
Subcategory Transistors Technology Si
Width 4.2 mm Part # Aliases BF199,112

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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