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Single IGBT Discrete Diode, 42A, 1700V, BIMOSFET TO247
TO-247-3Manufacturer:
Mfr.Part #:
IXBH42N170
Datasheet:
Series:
BIMOSFET™
Voltage - Collector Emitter Breakdown (Max):
1700 V
Current - Collector (Ic) (Max):
80 A
Current - Collector Pulsed (Icm):
300 A
EDA/CAD Models:
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The IXBH42N170 BiMOSFETs offer a unique combination of MOSFET and IGBT strengths, making them highly efficient and versatile devices. With a non-epitaxial construction and advanced fabrication processes, these high voltage components have proven to be a remarkable success in the market. The positive voltage temperature coefficient of both the saturation voltage and the forward voltage drop of the intrinsic diode allows for seamless parallel operation, enhancing overall performance and reliability. Additionally, the built-in intrinsic body diode acts as a protective mechanism, offering an alternative pathway for inductive load current during device turn-off. This feature helps prevent high voltage transients and ensures the longevity of the device, making it a preferred choice for various applications requiring high voltage handling capabilities
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | BIMOSFET™ |
IGBT Type | - | Voltage - Collector Emitter Breakdown (Max) | 1700 V |
Current - Collector (Ic) (Max) | 80 A | Current - Collector Pulsed (Icm) | 300 A |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 42A | Power - Max | 360 W |
Switching Energy | - | Input Type | Standard |
Gate Charge | 188 nC | Td (on/off) @ 25°C | - |
Test Condition | - | Reverse Recovery Time (trr) | 1.32 µs |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IXBH42 |
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Looks all right. I haven't checked in yet. Delivery about a month.