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IXBH42N170 +BOM

Single IGBT Discrete Diode, 42A, 1700V, BIMOSFET TO247

IXBH42N170 General Description

The IXBH42N170 BiMOSFETs offer a unique combination of MOSFET and IGBT strengths, making them highly efficient and versatile devices. With a non-epitaxial construction and advanced fabrication processes, these high voltage components have proven to be a remarkable success in the market. The positive voltage temperature coefficient of both the saturation voltage and the forward voltage drop of the intrinsic diode allows for seamless parallel operation, enhancing overall performance and reliability. Additionally, the built-in intrinsic body diode acts as a protective mechanism, offering an alternative pathway for inductive load current during device turn-off. This feature helps prevent high voltage transients and ensures the longevity of the device, making it a preferred choice for various applications requiring high voltage handling capabilities

Key Features

  • Improved system performance
  • Reduced power consumption and cooling costs
  • Simplified design and reduced BOM
  • Faster time-to-market and reduced development costs

Application

  • UPS for power supplies
  • Induction heating systems
  • Hybrid electric vehicles

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series BIMOSFET™
IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 80 A Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 42A Power - Max 360 W
Switching Energy - Input Type Standard
Gate Charge 188 nC Td (on/off) @ 25°C -
Test Condition - Reverse Recovery Time (trr) 1.32 µs
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Base Product Number IXBH42

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Ratings and Reviews

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I
I**h 12/06/2021

Looks all right. I haven't checked in yet. Delivery about a month.

1

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