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IXBK75N170 +BOM
IGBT 1700 V 200 A 1040 W Through Hole TO-264AA
TO-264-
Manufacturer:
-
Mfr.Part #:
IXBK75N170
-
Datasheet:
-
Technology:
Si
-
Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
1.7 kV
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EDA/CAD Models:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IXBK75N170, guaranteed quotes back within 12hr.
Availability: 6300 PCS
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IXBK75N170 General Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.
Key Features
- High blocking voltage
- High power density
- High current handling capability
- Low conduction losses
- MOS gate turn on for drive simplicity
- International standard and proprietary ISOPLUS
- TM
- packages
- Benefits:
- Eliminates multiple series-parallel lower voltage, lower current rated
- devices
- Simpler system design
- Improved reliability
- Reduced component count
- Reduced system cost
Application
- Radar transmitter power supplies
- Radar pulse modulators
- Capacitor discharge circuits
- High voltage power supplies
- AC switches
- HV circuit breakers
- Pulser circuits
- High voltage test equipment
- Laser & X-ray generators
Specifications
Product Category: | IGBT Transistors | Technology: | Si |
Mounting Style: | Through Hole | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1.7 kV | Collector-Emitter Saturation Voltage: | 3.1 V |
Maximum Gate Emitter Voltage: | - 20 V, + 20 V | Continuous Collector Current at 25 C: | 200 A |
Pd - Power Dissipation: | 1.04 kW | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C | Series: | IXBK75N170 |
Packaging: | Tube | Height: | 26.16 mm |
Length: | 19.96 mm | Product Type: | IGBT Transistors |
Factory Pack Quantity: | 25 | Subcategory: | IGBTs |
Tradename: | BIMOSFET | Width: | 5.13 mm |
Unit Weight: | 0.373904 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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We promise to provide 365 days quality assurance service for all our products.
In Stock: 6,300
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
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