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IXGX120N60A3 +BOM

Advanced IGBT chip featuring of power output, ideal for industrial control and automation system

Manufacturer:

IXYS
Mfr.Part #:

IXGX120N60A3
Datasheet:

IXGX120N60A3 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXGX120N60A3 General Description

The exceptional performance of product IXGX120N60A3, belonging to the Littelfuse PT IGBTs, makes it an ideal choice for high-speed applications such as UPS, Off-line Switching Power Supplies, and Induction Cooking. With its high gain, rapid switching, and minimal conduction losses, this IGBT is optimized to operate efficiently at speeds of up to 100kHz. Moreover, the G-series offers the flexibility of selecting a model with or without an integrated Ultrafast FRED diode, accommodating a wide range of project specifications

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	1.2 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	200 A
Pd - Power Dissipation	780 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	IXGX120N60
Continuous Collector Current	200 A	Continuous Collector Current Ic Max	600 A
Gate-Emitter Leakage Current	400 nA	Height	21.34 mm
Length	16.13 mm	Operating Temperature Range	- 55 C to + 150 C
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Tradename	GenX3
Width	5.21 mm	Unit Weight	0.229281 oz