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IXYH40N90C3D1 +BOM

900V, 90A Transistor: IXYH40N90C3D1, TO-247AD

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IXYH40N90C3D1 General Description

IGBT 900 V 90 A 500 W Through Hole TO-247 (IXTH)

Key Features

High Voltage Package

Optimized for Low Switching Losses

Square RBSOA

Positive Thermal Coefficient of Vce(sat)

Avalanche Rated

International Standard Packages

Application

POWER CONTROL

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 900 V Collector-Emitter Saturation Voltage 2.5 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 90 A
Pd - Power Dissipation 500 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series IXYH40N90
Continuous Collector Current 90 A Continuous Collector Current Ic Max 180 A
Gate-Emitter Leakage Current 100 nA Height 21.46 mm
Length 16.26 mm Operating Temperature Range - 55 C to + 150 C
Product Type IGBT Transistors Factory Pack Quantity 30
Subcategory IGBTs Tradename XPT, GenX3
Width 5.3 mm Unit Weight 0.158733 oz

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