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IXGK100N170 +BOM

IGBT 1700 V 170 A 830 W Through Hole PLUS264™

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IXGK100N170 General Description

IGBT 1700 V 170 A 830 W Through Hole PLUS264™

Key Features

LOW CONDUCTION LOSS

Application

POWER CONTROL

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.7 kV Collector-Emitter Saturation Voltage 3 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 170 A
Pd - Power Dissipation 830 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series IXGK100N170
Continuous Collector Current 170 A Continuous Collector Current Ic Max 600 A
Gate-Emitter Leakage Current 200 nA Height 26.59 mm
Length 20.29 mm Operating Temperature Range - 55 C to + 150 C
Product Type IGBT Transistors Factory Pack Quantity 25
Subcategory IGBTs Width 5.31 mm
Unit Weight 0.373904 oz

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