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See Technical Specifications

IXXH100N60C3 +BOM

Trans IGBT Chip N-CH 600V 190A 830W 3-Pin TO-247AD

Manufacturer:

IXYS
Mfr.Part #:

IXXH100N60C3
Datasheet:

IXXH100N60C3 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Models:

Request Free CAD Models for IXXH100N60C3

Email: [email protected]

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Tel: +852 95804164

IXXH100N60C3 General Description

Installation of the IXXH100N60C3 module is a breeze thanks to its compact and rugged design. This module is built to withstand harsh operating conditions, making it a durable and long-lasting solution for your needs. With built-in protection features such as overcurrent and overtemperature protection, you can trust that the IXXH100N60C3 will provide safe and reliable operation every time

Key Features

Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Capability
Short Circuit Capability
International Standard Package
Advantages
High Power Density
175°C Rated
Extremely Rugged
Low Gate Drive Requirement

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	2.2 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	190 A
Pd - Power Dissipation	830 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	IXXH100N60
Gate-Emitter Leakage Current	100 nA	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Tradename	XPT	Unit Weight	0.229281 oz