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See Technical Specifications

IXTA26P20P +BOM

A MOSFET rated at 26.0 Amps and 200V, featuring an Rds value of 0.170

Manufacturer:

Littelfuse
Mfr.Part #:

IXTA26P20P
Datasheet:

IXTA26P20P Datasheet (PDF)
Drain-Source Voltage (V):

-200
Maximum On-Resistance @ 25 ℃ (Ohm):

0.17
Continuous Drain Current @ 25 ℃ (A):

-26
Gate Charge (nC):

56
EDA/CAD Models:

Request Free CAD Models for IXTA26P20P

IXTA26P20P General Description

Embedded within the IXTA26P20P Polar™ P-Channel MOSFET is our groundbreaking Polar technology, which delivers a significant reduction in both on-state resistance (RDSon) and gate charge (Qg) by 30% and 40% respectively compared to traditional alternatives. This enhanced performance leads to minimized conduction loss and superior switching characteristics, making it a standout choice for demanding applications. Moreover, these MOSFETs are ruggedly constructed to withstand dynamic dv/dt and avalanche scenarios, ensuring durability in harsh environments. The positive temperature coefficient of the on-state resistance facilitates easy paralleling for enhanced power handling capabilities

Key Features

Low noise and vibrations
High current handling
Advanced thermal management
Simplified maintenance

Application

Stable voltage regulation
Compact design footprint
Advanced control features

Specifications

Drain-Source Voltage (V)	-200	Maximum On-Resistance @ 25 ℃ (Ohm)	0.17
Continuous Drain Current @ 25 ℃ (A)	-26	Gate Charge (nC)	56
Input Capacitance, CISS (pF)	2740	Thermal resistance [junction-case] (K/W)	0.42
Configuration	Single	Typical Reverse Recovery Time (ns)	240
Power Dissipation (W)	300	Sample Request	Yes
Check Stock	Yes