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IXYB82N120C3H1 +BOM

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IXYB82N120C3H1 General Description

IGBT 1200 V 164 A 1040 W Through Hole PLUS264™

Key Features

  • Optimized for Low Switching Losses
  • Square RBSOA
  • Anti-Parallel Ultra Fast Diode
  • Positive Thermal Coefficient of
  • Vce(sat)
  • Avalanche Rated
  • High Current Handling Capability
  • International Standard Package
  • Advantages
  • High Power Density
  • Low Gate Drive Requirement

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 3.2 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 164 A
Pd - Power Dissipation 1.04 kW Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series IXYB82N120
Continuous Collector Current Ic Max 164 A Gate-Emitter Leakage Current 100 nA
Product Type IGBT Transistors Factory Pack Quantity 25
Subcategory IGBTs Tradename XPT
Unit Weight 0.373904 oz

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