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IXYH50N65C3D1 +BOM
IGBT Transistors Disc XPT-GenX3 TO-247AD
TO-247-3-
Manufacturer:
-
Mfr.Part #:
IXYH50N65C3D1
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Datasheet:
-
Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
650 V
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EDA/CAD Models:
Availability: 4939 PCS
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IXYH50N65C3D1 General Description
IGBT 650 V 132 A 600 W Through Hole TO-247 (IXTH)
Specifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 650 V | Collector-Emitter Saturation Voltage | 1.73 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 132 A |
Pd - Power Dissipation | 600 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Continuous Collector Current Ic Max | 250 A |
Gate-Emitter Leakage Current | 100 nA | Product Type | IGBT Transistors |
Factory Pack Quantity | 30 | Subcategory | IGBTs |
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In Stock: 4,939
Minimum Order: 1
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